异质结
量子点
光电流
纳米线
材料科学
光电子学
硫化镉
透射电子显微镜
硫族元素
吸收(声学)
吸收光谱法
载流子
硫化铅
纳米技术
化学
光学
结晶学
物理
复合材料
冶金
作者
Ying-Chu Chen,Hao-Hsuan Chang,Yu‐Kuei Hsu
出处
期刊:ACS Sustainable Chemistry & Engineering
[American Chemical Society]
日期:2018-06-27
卷期号:6 (8): 10861-10868
被引量:34
标识
DOI:10.1021/acssuschemeng.8b02154
摘要
Decoration of CuInS2 (CIS) quantum dots (QDs) on ZnO nanowires (NWs) with an interlayer of In2S3 as photoelectrode has been successfully fabricated on FTO via the simple solution routes for photoelectrochemical (PEC) application. Scanning electron microscopy, transmission electron microscopy, and X-ray diffraction are utilized to systematically analyze the morphology and structure of the CIS QD/In2S3/ZnO NWs heterostructure. The composition of this multilayer heterostructure and the removal of QD ligands by a thermal process are confirmed by X-ray photoelectron spectra. In comparison with CIS QDs/ZnO NWs, the CIS QD/In2S3/ZnO heterostructural photoelectrode displays an efficient charge separation and carrier transport path for photocurrent up to 2.4 mA·cm–2 that is competitive with other Cd- and Pb-free QD-based materials. In addition, Mott–Schottky analysis demonstrates the negative shift of the flat band in the CIS QD/In2S3/ZnO, which benefits the early onset potential. Significantly, this hierarchical photoelectrode shows the improvement the absorption and conversion of solar light in the visible region obtained using a pristine ZnO structure. Our research paves the way for exploring lead-free and lead-free sulfide materials in the new category of solar applications.
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