材料科学
钙钛矿(结构)
发光二极管
钝化
卤化物
光电子学
量子效率
二极管
纳米技术
化学工程
无机化学
工程类
化学
图层(电子)
作者
Lianfeng Zhao,Nicholas Rolston,Kyung Min Lee,Xunhua Zhao,Marcos Reyes-Martinez,Nhu L. Tran,Yao‐Wen Yeh,Nan Yao,Gregory D. Scholes,Yueh Lin Loo,Annabella Selloni,Reinhold H. Dauskardt,Barry P. Rand
标识
DOI:10.1002/adfm.201802060
摘要
Abstract Perovskite light‐emitting diodes (LEDs) require small grain sizes to spatially confine charge carriers for efficient radiative recombination. As grain size decreases, passivation of surface defects becomes increasingly important. Additionally, polycrystalline perovskite films are highly brittle and mechanically fragile, limiting their practical applications in flexible electronics. In this work, the introduction of properly chosen bulky organo‐ammonium halide additives is shown to be able to improve both optoelectronic and mechanical properties of perovskites, yielding highly efficient, robust, and flexible perovskite LEDs with external quantum efficiency of up to 13% and no degradation after bending for 10 000 cycles at a radius of 2 mm. Furthermore, insight of the improvements regarding molecular structure, size, and polarity at the atomic level is obtained with first‐principles calculations, and design principles are provided to overcome trade‐offs between optoelectronic and mechanical properties, thus increasing the scope for future highly efficient, robust, and flexible perovskite electronic device development.
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