材料科学
碳化硅
位错
垂直的
凝聚态物理
晶体缺陷
硅
光电子学
结晶学
工程物理
复合材料
几何学
数学
物理
工程类
化学
作者
Daisuke Nakamura,Itaru Gunjishima,S. Yamaguchi,Tadashi Ito,Atsuto Okamoto,Hiroyuki Kondo,Shoichi Onda,Kazumasa Takatori
出处
期刊:Nature
[Springer Nature]
日期:2004-08-01
卷期号:430 (7003): 1009-1012
被引量:376
摘要
Silicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices. Careful consideration of the thermal conditions in which SiC [0001] is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes), inclusions, small-angle boundaries and long-range lattice warp has been reduced. But some macroscopic defects (about 1-10 cm(-2)) and a large density of elementary dislocations (approximately 10(4) cm(-2)), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12-16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth), to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems.
科研通智能强力驱动
Strongly Powered by AbleSci AI