材料科学
分子束外延
光电子学
基质(水族馆)
氮化物
发光
光致发光
同轴
分子束
图层(电子)
光学
外延
化学
分子
纳米技术
海洋学
工程类
有机化学
物理
地质学
电气工程
作者
Abderrahim Rahim Boucherif,Maxime Rondeau,Hubert Pelletier,Philippe‐Olivier Provost,Abderraouf Boucherif,Christian Dubuc,Hassan Maher,Richard Arès
摘要
A focused gas beam injection is proposed for high-efficiency ammonia molecular beam epitaxial growth of III-nitride. This new injector design is based on a double, coaxial radial high-conductance geometry, which allows rotation-free growth with fast gas switching. The injection profile is characterized through a mobile ion gauge and is then compared to simulations, where experimental results show that up to 27% of the injected molecules reach the surface of the substrate. The injector is tested for the growth of GaN layers, and high-resolution x-ray diffraction rocking curves of a 1 μm-thick GaN layer grown on a commercial GaN template (1 μm-thick layer of GaN on Si) was measured around the 002 Bragg condition and a full width at half maximum of 594 arc sec was obtained. Low-temperature photoluminescence for the same layer shows intense band edge emission and a low yellow luminescence. Hall measurements of the silicon-doped layers show high carrier concentrations up to 2 × 1019 cm−3 and a corresponding mobility of 204 cm2/V s.
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