氩
离子
硅
材料科学
蚀刻(微加工)
通量
氯
原子物理学
分子动力学
辐照
氪
无定形固体
离子束
图层(电子)
分析化学(期刊)
化学
纳米技术
计算化学
光电子学
结晶学
物理
有机化学
色谱法
核物理学
冶金
作者
Joseph R. Vella,David Humbird,David B. Graves
摘要
Classical molecular dynamics (MD) is used to simulate atomic layer etching processes of silicon by alternating exposure to chlorine gas and argon ions. In order to validate our model, a rigorous comparison is done with ion beam experiments found in the literature [Park et al., Jpn. J. Appl. Phys. 44, 389 (2005)]. It is shown that the etch per cycle (EPC) as a function of argon ion energy from simulations is in quantitative agreement with experimental results if the correct argon ion fluence is used in the simulations. The EPC as a function of ion irradiation time and amount of chlorine exposure also show good agreement with the experiment. The MD simulations also show the formation of an amorphous silicon region with chlorine atoms mixed uniformly throughout following ion bombardment. Finally, the etch products during the ion irradiation step are analyzed and discussed.
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