Research on thermal field control of large-size Monocrystalline silicon

Monocrystalline silicon is an important semiconductor material, which is used in the production of 90% of semiconductor devices and integrated circuit chips. With the rapid development of integrated circuit technology, the quality requirements for monocrystalline silicon have also been continuously improved. The Czochralski method is the main method of producing monocrystalline silicon, and its scientific principles and methods, growth technology and technology, control strategies and methods have always been the focus of high attention and constant research in the theoretical and industrial circles. According to the growth process of large-size monocrystalline silicon, under the thermal field control, numerical simulation and parameter control are carried out, and then the large-size Czochralski silicon single crystals are studied.