自旋电子学
铁电性
材料科学
单层
凝聚态物理
范德瓦尔斯力
堆积
联轴节(管道)
自旋(空气动力学)
光电子学
纳米技术
物理
铁磁性
化学
核磁共振
复合材料
电介质
有机化学
分子
热力学
作者
Xinfeng Chen,Xi Ding,Gaoyang Gou,Xiao Cheng Zeng
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-03-01
卷期号:24 (10): 3089-3096
被引量:1
标识
DOI:10.1021/acs.nanolett.3c04869
摘要
Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D "slidetronics". Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr2 and HgI2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm2, readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime.
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