钝化
硅
材料科学
纳米晶材料
光电子学
纳米晶硅
氧化物
晶体硅
纳米技术
冶金
非晶硅
图层(电子)
作者
Yang Li,Xiyang Geng,Yuhe Zheng,Yonglin Ye,Min Li,Xuying Duan,Junhua Xu,Ruilong Zhang,Shaohua Liu,Wenkai Zhou,Xingliang Li,Liting Wang,Guoping Huang,Feng Zhu
摘要
Silicon oxide (SiOx) is often used to provide powerful passivation for the crystalline silicon (c-Si) solar cells; however, conventional SiOx passivated contacts are typically amorphous and defective, with low electrical conductivity. In this study, we introduce a sol-crystallization induction (SCI) method that enables the growth of compact, less defective, and vertically oriented SiOx (v-SiOx) passivated contacts on the c-Si surface. Compared to a-SiOx:H, v-SiOx demonstrates enhanced carrier concentration and vertical conductivity, forming an efficient electron-selective conduction contacts. By optimizing the v-SiOx nanocrystalline contact, we achieved an open-circuit voltage (VOC) of 746 mV and a short-circuit current density (JSC) of 41.54 mA cm−2 for the tunnel oxide passivated contact (TOPCon) solar cells, resulting in a power conversion efficiency (PCE) exceeding 26.01%. The promising SiOx passivation is expected to offer a significant support for the further development of high-efficiency c-Si solar cells, both in TOPCon and silicon heterojunction (SHJ) technologies.
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