High-yield growth of high-quality cubic BAs single crystals using the Bridgman method

The increasing complexity of semiconductor devices fabricated from wide-bandgap and ultra-wide-bandgap materials demand advanced thermal management solutions to mitigate heat buildup, a major cause of device failure. High thermal conductivity materials are thus becoming crucial for thermal management. Cubic boron arsenide (c-BAs) has emerged as a promising candidate. However, challenges remain in synthesizing high-quality crystals with low defect concentrations, high homogeneous thermal conductivity, and high yields using the conventional chemical vapor transport method. In this study, we report the synthesis of high-yield c-BAs single crystals using the Bridgman method. The crystals exhibit high uniformity, reduced defect densities, and lower carrier concentrations as confirmed through x-ray diffraction, Raman spectroscopy, temperature-dependent photoluminescence, and electrical transport measurements. Our work represents a significant step toward scalable production of high-quality c-BAs for industrial applications, offering a practical solution for improving thermal management in next-generation electronic devices.