肖特基二极管
石墨烯
单层
肖特基势垒
材料科学
光电子学
量子隧道
纳米尺度
纳米技术
开尔文探针力显微镜
金属半导体结
二极管
导电原子力显微镜
制作
石墨烯纳米带
扫描隧道显微镜
原子力显微镜
病理
替代医学
医学
作者
Chandra S. Pathak,Mansi Garg,J. P. Singh,Rajendra Singh
标识
DOI:10.1088/1361-6641/aab8a6
摘要
The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0–4.4 and 0.50–0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.
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