电介质
材料科学
有机半导体
无定形固体
电子迁移率
并五苯
半导体
有机场效应晶体管
兴奋剂
高-κ电介质
载流子
光电子学
纳米技术
场效应晶体管
薄膜晶体管
晶体管
化学
图层(电子)
有机化学
电气工程
工程类
电压
作者
Dongqing Lin,Wenhua Zhang,Hang Yin,Haixia Hu,Yan Li,He Zhang,Le Yi Wang,Xinmiao Xie,Hu Hongkai,Yongxia Yan,Haifeng Ling,J. B. Liu,Yue Qian,Lei Tang,Yong-Xia Wang,Chaoyang Dong,Linghai Xie,Hao Zhang,Sha-Sha Wang,Ying Wei,Xuefeng Guo,Dan Lu,Wei Huang
出处
期刊:Research
[AAAS00]
日期:2022-01-12
卷期号:2022
被引量:5
标识
DOI:10.34133/2022/9820585
摘要
High dielectric constants in organic semiconductors have been identified as a central challenge for the improvement in not only piezoelectric, pyroelectric, and ferroelectric effects but also photoelectric conversion efficiency in OPVs, carrier mobility in OFETs, and charge density in charge-trapping memories. Herein, we report an ultralong persistence length (lp ≈ 41 nm) effect of spiro-fused organic nanopolymers on dielectric properties, together with excitonic and charge carrier behaviors. The state-of-the-art nanopolymers, namely, nanopolyspirogrids (NPSGs), are synthesized via the simple cross-scale Friedel-Crafts polygridization of A2B2-type nanomonomers. The high dielectric constant (k = 8.43) of NPSG is firstly achieved by locking spiro-polygridization effect that results in the enhancement of dipole polarization. When doping into a polystyrene-based dielectric layer, such a high-k feature of NPSG increases the field-effect carrier mobility from 0.20 to 0.90 cm2 V-1 s-1 in pentacene OFET devices. Meanwhile, amorphous NPSG film exhibits an ultralow energy disorder (<50 meV) for an excellent zero-field hole mobility of 3.94 × 10-3 cm2 V-1 s-1, surpassing most of the amorphous π-conjugated polymers. Organic nanopolymers with high dielectric constants open a new way to break through the bottleneck of efficiency and multifunctionality in the blueprint of the fourth-generation semiconductors.
科研通智能强力驱动
Strongly Powered by AbleSci AI