材料科学
铁电性
各向异性
四方晶系
凝聚态物理
异质结
应变工程
极化(电化学)
晶体结构
结晶学
硅
电介质
物理
光学
光电子学
物理化学
化学
作者
Kai Li,Feng Jin,Xingchang Zhang,Kuan Liu,Zixun Zhang,Enda Hua,Jinfeng Zhang,Huan Ye,Guoying Gao,Chao Ma,Lingfei Wang,Wenbin Wu
标识
DOI:10.1002/adfm.202209925
摘要
Abstract Hafnium‐based binary oxides have attracted considerable attention due to their robust ferroelectricity at the nanoscale and compatibility with silicon‐based electronic technologies. To further promote the potential of Hafnium oxides for practical device applications, it is essential to effectively harness the interplay between structural symmetry, domain configuration, and ferroelectricity. Here, using Hf 0.5 Zr 0.5 O 2 /La 0.67 Sr 0.33 MnO 3 (HZO/LSMO) heterostructures as a model system, the anisotropic strain‐mediated symmetry engineering and ferroelectricity enhancement are systematically investigated. By growing the heterostructures on (110)‐oriented perovskite substrates, considerable anisotropic strain is imposed on the LSMO bottom electrodes. Such an anisotropically‐strained LSMO layer acts as a structural template and effectively tune the structural symmetry, polar/non‐polar phase ratio, and ferroelectricity of the HZO top layer. Specifically, the anisotropic tensile strain stabilizes the ferroelectric rhombohedral and orthorhombic phases, thus enhancing the remnant polarization ( P r ) up to 22 µC cm −2 . In contrast, the anisotropic compressive strain facilitates the formation of non‐ferroelectric tetragonal phases, leading to a suppressed P r down to 8 µC cm −2 . These findings provide a guideline for understanding and modulating the intrinsic structure‐ferroelectricity relationship of HZO through anisotropic strain‐mediated symmetry engineering, which may shed light on the development of hafnium‐oxide‐based electronic devices.
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