材料科学
热稳定性
退火(玻璃)
薄膜
单层
复合材料
波长
光电子学
透射电子显微镜
铍
氮化物
结晶度
光学
纳米技术
图层(电子)
化学工程
化学
工程类
物理
有机化学
作者
Zuev S. Yu.,Lopatin A. Ya.,В. И. Лучин,Н. Н. Салащенко,D. A. Tatarskiy,Н. Н. Цыбин,Н. И. Чхало
出处
期刊:Журнал технической физики
[Ioffe Institute Russian Academy of Sciences]
日期:2022-01-01
卷期号:92 (1): 68-68
被引量:2
标识
DOI:10.21883/tp.2022.01.52535.197-21
摘要
We demonstrate the possibility of manufacturing Be-basedultrathin films with high transmission at wavelengths of 11.4 and 13.5 nm. For free-standing films of Be and Be-based multilayer structures (Si/Be,ZrSi2/Be, Be/BexNy, Zr/Be, Ru/Be, Mo/Be), we determine the thresholds of theabsorbed power at which over a short period (tens of minutes) of vacuumannealing, initially sagging free-standing films became visibly stretchedover the hole. Of the film structures tested here, the Be/BexNy structure(with beryllium nitride interlayers) showed the highest threshold for theabsorbed power (1 W/cm 2 ). However, due to the low strength of thisstructure, ZrSi 2 /Be, Mo/Be, and Be films seem to be more promising for themanufacture of a full-size pellicle. Long-term vacuum annealing of Mo/Beand Be ultrathin films showed that they could withstand 24 hours of vacuumheating at an absorbed power density of 0.2 W/cm 2 (film temperature 250 o C)without noticeable changes in EUV transmission or sagging of films. Withcomparable transmission (~83% at 13.5 nm and ~88% at 11.4 nm), a multilayerMo/Be structure with a thickness of 30 nm appears to be preferable, as itshows less brittleness than a monolayer Be film with a thickness of 50 nm. Keywords: Be-based pellicle, multilayer thin film, EUV lithography,thermal stability\
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