符号
放大器
班级(哲学)
晶体管
数学
电气工程
计算机科学
电压
算术
人工智能
工程类
CMOS芯片
作者
Amirreza Alizadeh,Ali Medi
标识
DOI:10.1109/tmtt.2023.3312972
摘要
In the above article [1] , the term $I_{\text {max}}$ is defined as the peak drain-source current ( $i_{\text {DS}}$ ) of the transistor in class-B power amplifier (PA) ( $I_{\text {peakB}}$ ), which is not necessarily equal to the maximum tolerable current of the device ( $I_{\text {maxT}}$ ). This assumption has been made to consider the general case, where the transistor can operate at different compression levels from 0.1 dB to hard compression.
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