Impact of quantum capacitance on the characteristics of MoS2 field effect transistor

MoS2 transistors with SiO2 gate insulators were fabricated from the experiment. The Raman and Photoluminescence of monolayer MoS2 and the electrical and photoelectric properties of prepared MoS2 transistors were investigated. Notably, the electrical performance model MoS2 transistor was carried out by considering the quantum effect of capacity building of MoS2 channel, and comparison analysis according to the result of simulation and experiment results, the model is suitable for the system study of MoS2 transistor. These results suggest that MoS2 transistors are suitable for nanoelectronics and optoelectronics devices.