Sub 10 nm Bilayer Bi2O2Se Transistors

Abstract Due to high carrier mobility and excellent air stability, emerging 2D semiconducting Bi 2 O 2 Se is attracting much attention as a potential channel candidate for the next‐generation field effect transistor (FETs). Although the fabricated bilayer (BL) and few layers Bi 2 O 2 Se FETs exhibit a large current on/off ratio (>10 6 ) and a near‐ideal subthreshold swing value (≈65 mV dec −1 ), the performance limit of ultrashort channel Bi 2 O 2 Se FET is obscure. Here the ballistic performance upper limit of the sub 10 nm BL Bi 2 O 2 Se metal‐oxide‐semiconductor FETs (MOSFETs) is simulated for the first time by using ab initio quantum transport simulations. The optimized BL Bi 2 O 2 Se n‐type MOSFETs can fulfill the high performance device requirements on the on‐state current, delay time, and power dissipation of the International Technology Roadmap for Semiconductors in 2028 until the gate length is scaled down to 5 nm. Therefore, Moore's law can be extended to 5 nm by taking BL Bi 2 O 2 Se as the channel.