卤化物
钙钛矿(结构)
降级(电信)
电化学
阴极
材料科学
离子
光电子学
氧化物
无机化学
电极
化学
化学工程
物理化学
结晶学
工程类
有机化学
电信
冶金
计算机科学
作者
Ross A. Kerner,Lianfeng Zhao,Steven P. Harvey,Joseph J. Berry,Jeffrey Schwartz,Barry P. Rand
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2020-10-06
卷期号:5 (11): 3352-3356
被引量:39
标识
DOI:10.1021/acsenergylett.0c01805
摘要
The constituent ions of halide perovskite materials are mobile in the solid state and known to participate in reduction/oxidation reactions. Yet few parameters related to electrochemical processes occurring within devices have been carefully determined. Here, we characterize such reactions in model MAPbI3 perovskite devices, and we quantify threshold voltages for key reactions. Gold is oxidized and mobilized under nitrogen, in the dark, at the MAPbI3/Au interface at 0.8 V. When this interface is buffered with the organic hole transport material (HTM), 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamino)-9,9′-spirobifluorene, MAPbI3 begins to degrade at 1.2 V; degradation liberates ions that subsequently enable Au migration. Thresholds are insensitive to MAPbI3 thickness or choice of organic HTM or oxide cathode, which suggests that these reactions are driven electrochemically; the electric field across the device is less important. These results have profound implications for understanding in operando degradation pathways of optoelectronic perovskite devices that are varied in terms of interface structures, active material compositions, and ranges of external stressors.
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