功率半导体器件
功率(物理)
电力电子
电压
计算机科学
电感器
功率MOSFET
缓冲器
电源模块
电容器
拓扑(电路)
脉冲宽度调制
门驱动器
作者
Jiangbiao He,Ramin Katebi,Nathan Weise
出处
期刊:IEEE Transactions on Industrial Electronics
[Institute of Electrical and Electronics Engineers]
日期:2017-05-25
卷期号:64 (10): 8344-8352
被引量:37
标识
DOI:10.1109/tie.2017.2708033
摘要
Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device concept. In this paper, a current-dependent switching strategy is introduced and implemented to further improve the performance of Si/SiC hybrid switches. This proposed switching strategy is based on a comprehensive consideration of reducing device losses, reliable operation, and overload capability. Based on the utilization of such Si/SiC hybrid switches and the proposed switching strategy, a 15-kW single-phase H-bridge inverter prototype was implemented and tested in the laboratory. Simulation and experimental results are given to verify the performance of the hybrid switches and the new switching strategy.
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