Chiral cation promoted interfacial charge extraction for efficient tin-based perovskite solar cells

佩多:嘘 能量转换效率 材料科学 钙钛矿(结构) 磁滞 化学工程 磺酸盐 表面能 光电子学 纳米技术 图层(电子) 复合材料 凝聚态物理 物理 冶金 工程类
作者
Weiyin Gao,He Dong,Nan Sun,Lingfeng Chao,Wei Hui,Qi Wei,Hai Li,Yingdong Xia,Xingyu Gao,Guichuan Xing,Zhongbin Wu,Lin Song,Peter Müller‐Buschbaum,Chenxin Ran,Yonghua Chen
出处
期刊:Journal of Energy Chemistry [Elsevier BV]
卷期号:68: 789-796 被引量:23
标识
DOI:10.1016/j.jechem.2021.09.019
摘要

Efficient Sn-based perovskite solar cell device with power conversion efficient of 10.73% and low hysteresis effect is reported, where chiral cation is adopted to promote the formation of 2D/3D structure of the perovskite film and facilitate the selective hole transportation at the interface of the device. Pb-free Sn-based perovskite solar cells (PSCs) have recently made inspiring progress, and power conversion efficiency (PCE) of 14.8% has been achieved. However, due to the energy-level mismatch and poor interfacial contact between commonly used hole transport layer (i.e., poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS) and FASnI 3 film, it is still challenging to effectively extract holes at the interface. Owing to the p-type nature of Sn-based perovskites, the efficient hole extraction is of particular significance to improve the PCE of their solar cells. In this work, for the first time, the role of chiral cations, α -methylbenzylamine ( S -/ R -/ rac -MBA), in promoting hole transportation of FASnI 3 -based PSCs is demonstrated. The introduction of MBAs is found to form 2D/3D film with low-dimensional structures locating at PEDOT:PSS/FASnI 3 interface, which facilitates the energy level alignment and efficient charge transfer at the interface. Importantly, chiral-induced spin selectivity (CISS) effect of R -MBA 2 SnI 4 induced by chiral R -MBA cation is found to further assist the specific interfacial transport of accumulated holes. As a result, R -MBA-based PSCs achieve decent PCE of 10.73% with much suppressed hysteresis and enhanced device stability. This work opens up a new strategy to efficiently promote the interfacial extraction of accumulated charges in working PSCs.
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