上部结构
溅射
材料科学
分析化学(期刊)
化学计量学
基质(水族馆)
相(物质)
衍射
大气温度范围
扩散
铜
溅射沉积
结晶学
化学
薄膜
热力学
光学
冶金
纳米技术
有机化学
地质学
物理
海洋学
色谱法
作者
J. A. Villada,Màrius Ramírez-Cardona,M. A. Hernández‐Landaverde,J.C. Franco-Correa,S. Jiménez‐Sandoval,Mario E. Rodríguez‐García
标识
DOI:10.1016/j.physb.2021.413372
摘要
The effect of the substrate temperature (Ts) on the growth of Cu2-xTe films using the RF sputtering technique has been studied through a structural assessment of the different trigonal (space group P3m1) phases encountered in the range 100–350 °C. A new stoichiometric Cu7Te4 phase (δ′) with Z = 1 is proposed, and it is present in all the temperatures studied. Low-angle peaks (2θ < 20°) of Glancing Incidence X-ray Diffraction (GIXD) patterns are consistent with the formation of commensurate phases (forms α′) through variations in the c parameter whose value can be as large as 25.47 Å. The base modulation vector is the c parameter of the unit-cell of phase δ′ that, in this work, resulted in a value of 3.61 Å. The origin of the observed commensurate phases has been ascribed to an occupancy-wave modulation. Whereas at high temperatures (Ts > 250 °C), the major phase is δ' (Cu7Te4 or Cu2-xTe with x = 0.25), the predominant phase, for Ts < 250 °C, is the commensurate superstructure 7C with higher [Cu]/[Te] ratio (x < 0.25). The transition between these two thermal regimes is stated at a temperature of about 250 °C. Maintaining a constant global composition, the devaluation of [Cu] in films, with the temperature above the transition range, is explained in terms of diffusion of copper downward the film and towards its edges.
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