铯
铜
二极管
材料科学
光电子学
发光二极管
碘
碘化物
放射化学
化学
无机化学
冶金
作者
Chunxue Zhuo,Chengcheng Wang,Pinliang Xie,Zhiyuan Kuang,Yuyang Zhang,Junjie Feng,Mian Dai,Nana Chen,Lei Xu,Xiaozhen Li,Jin Chang,Jianpu Wang
标识
DOI:10.1021/acsphotonics.4c02485
摘要
Molecular additives are widely used to improve the film quality and optoelectronic performance of solution-processed metal halides, owing to their diverse interactions with metal-halide precursors. However, the relationship between additive-precursor interaction strength and the optoelectronic performance of metal halides remains unclear. In this study, we investigate cesium copper iodide (Cs–Cu–I) light-emitting diodes (LEDs) incorporating crown ether (CE) additives and demonstrate that the additive-Cs+ interactions can significantly influence the device performance. By regulating the additive-Cs+ interaction strength, we achieve Cs–Cu–I LEDs with a peak external quantum efficiency of 4.5%, over 20 times higher than that of the control device. The remarkable EQE enhancement is primarily attributed to the suitable additive-Cs+ interactions, which enable a gradual release of free precursors to participate in the crystallization of Cs–Cu–I, thus improving the crystalline quality of emissive films. This work not only provides valuable insights into the rational design of molecular additives for copper halide LEDs but also offers guidance for other metal halide optoelectronic devices, particularly those involving additive-precursor interactions.
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