Enhanced stability and mobility of aligned In2O3 nanofiber field-effect transistors with Y2O3 passivation

Field-effect transistors (FETs) based on indium oxide (In2O3) nanofibers demonstrate significant potential for applications in next-generation electronic devices. However, In2O3 nanofiber FETs typically exhibit deteriorated electrical performance and bias stability due to the disordered arrangement of nanofibers and a high concentration of oxygen vacancy defects. In this study, In2O3 nanofibers were prepared by electrospinning, and the effects of nanofiber orientation and Y2O3 passivation on FET electrical performance were systematically investigated. The results indicate that after Y2O3 passivation, the aligned In2O3 nanofiber FETs exhibit enhanced electrical performance and superior positive bias stress and negative bias illumination stress stability. The Y2O3 passivation layer effectively prevents the penetration of external O2 and H2O molecules, while the diffusion of Y3+ into the back channel reduces oxygen vacancies, thereby improving device stability. When Al2O3 was employed as the dielectric layer, the electrical performance of aligned In2O3 nanofiber FET with Y2O3 passivation was further optimized, achieving a mobility of 18.2 cm2/V s and a subthreshold swing of 85 mV/dec. Meanwhile, the FET exhibits excellent environmental stability after 60 days of atmospheric exposure. This work provides a strategy for fabricating nanofiber-based FETs with high mobility and stability.