热压连接
材料科学
焊接
阳极连接
共金键结
铜
引线键合
薄脆饼
集成电路
三维集成电路
晶片键合
光电子学
纳米技术
复合材料
冶金
计算机科学
炸薯条
微观结构
图层(电子)
共晶体系
电信
作者
Yuan-Chiu Huang,Yu-Xian Lin,Chien-Kang Hsiung,Tzu‐Heng Hung,Kuan‐Neng Chen
出处
期刊:Nanomaterials
[MDPI AG]
日期:2023-09-04
卷期号:13 (17): 2490-2490
摘要
Advanced packaging technology has become more and more important in the semiconductor industry because of the benefits of higher I/O density compared to conventional soldering technology. In advanced packaging technology, copper–copper (Cu-Cu) bonding has become the preferred choice due to its excellent electrical and thermal properties. However, one of the major challenges of Cu-Cu bonding is the high thermal budget of the bonding process caused by Cu oxidation, which can result in wafer warpage and other back-end-of-line process issues in some cases. Thus, for specific applications, reducing the thermal budget and preventing Cu oxidation are important considerations in low-temperature hybrid bonding processes. This paper first reviews the advancements in low-temperature Cu-based bonding technologies for advanced packaging. Various low-temperature Cu-Cu bonding techniques such as surface pretreatment, surface activation, structure modification, and orientation control have been proposed and investigated. To overcome coplanarity issues of Cu pillars and insufficient gaps for filling, low-temperature Cu-Cu bonding used, but it is still challenging in fine-pitch applications. Therefore, low-temperature Cu/SiO2, Cu/SiCN, and Cu/polymer hybrid bonding have been developed for advanced packaging applications. Furthermore, we present a novel hybrid bonding scheme for metal/polymer interfaces that achieves good flatness and an excellent bonding interface without the need for the chemical mechanical polishing (CMP) process.
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