光电子学
单光子雪崩二极管
探测器
雪崩二极管
雪崩光电二极管
二极管
光学
光子
光子计数
激光雷达
材料科学
光电探测器
激光器
砷化铟镓
物理
砷化镓
电压
击穿电压
量子力学
作者
Weiwei LIANG,Ruiguang Yin,Hao Guo,Guangsen Ren,Lin Gan,Chen Qianrong
摘要
Single-Photon detection technology is widely focused because of the higher sensitivity of light detection. Laser in the near-infrared region (1.0-1.7μm) has the advantages of high atmospheric transmittance, weak scattering and weak solar background radiation, which is the ideal working band of aerosol remote sensing and three dimensional imaging Light Detection and Ranging system (LiDAR). Comparing with the other Single-Photon detection technology, the InGaAs Avalanche Photo Diode (APD) detector is widely used in LiDAR system because of its single-photon sensitivity and excellent time-resolved performance. With the development of semiconductor technology, InGaAs single-photo avalanche diode (SPAD) arrays detector integrating multiple pixels and time measurement circuits are widely applied owe to the ability of collecting photon information. This paper concludes the development of InGaAs single-photon avalanche diode arrays and introduces some typical applications of InGaAs single photon avalanche diode arrays in imaging, the prospect of the developing for InGaAs single photon avalanche diode arrays is also discussed.
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