带隙基准
电源抑制比
温度系数
电压基准
材料科学
电压
CMOS芯片
光电子学
电气工程
工程类
跌落电压
放大器
作者
Hao Peng,Haijun Lin,Zhi Chai,Zhexin Zheng,Jiawen Peng
标识
DOI:10.1109/iccs56666.2022.9936160
摘要
In this paper, A precision bandgap reference (BGR) with high power supply rejection ratio (PSRR) and low-temperature coefficient (TC) is designed. It comprises a bandgap reference core circuit, a negative feedback loop, a nonlinear temperature compensation circuit, and a bias circuit. The bias circuit is used to increase the PSRR, a negative feedback loop is introduced to maintain the constant output reference voltage, and a nonlinear compensation circuit is used to increase the temperature drift coefficient of the bandgap reference. The voltage supply is 3. 3V. This simulation is based on the SMIC 0.1S$\mu$m CMOS process. The results show that the temperature drift coefficient of the bandgap reference source is 3.255ppm/°C in the temperature range of −40°C~130°C. The PSRR is 103. 192dB at the frequency of 1Hz. The power consumption is 13.1996$\mu$W. The offset voltage is 2.15591mV by Monte Carlo simulation.
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