与非门
材料科学
闪光灯(摄影)
氮化物
氧化物
闪存
删除
光电子学
计算机科学
降级(电信)
块(置换群论)
加速度
计算机硬件
逻辑门
复合材料
图层(电子)
光学
冶金
物理
电信
程序设计语言
经典力学
数学
算法
几何学
作者
Yunjie Fan,Zhiqiang Wang,Shengwei Yang,Cong Du,Kun Han,Yunhui He
标识
DOI:10.1016/j.mee.2023.112031
摘要
In this work, the damage caused by program/erase (P/E) operation in 3D NAND memory devices made of Metal-Al2O3-Nitride-Oxide-Semiconductor (MANOS) was examined. The damage caused by program and erase operations independently was intended to be identified and realized using several types of cycling stresses. Physical models were discussed to interpret that the anode hole could be responsible for the damage to the Al2O3-Nitride-Oxide (ANO) gate stacks. The tunnel oxide damage was caused by the erase operation and could be enhanced by a higher cycling temperature. This led to a faster program and a slower erase, and it demonstrated a strong correlation with retention and its active energy (Ea). On the other hand, program operation may merely be contributing to block oxide damage, with an invisible impact on erase efficiency and retention but a reduction in program efficiency. An optimized single pulse erase scheme was discussed. Not only can it reduce ANO damage and improve retention, but it can also decrease erase time. Furthermore, a feasible endurance acceleration method was discussed to save a lot of cycling time.
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