拓扑绝缘体
凝聚态物理
量子反常霍尔效应
物理
范德瓦尔斯力
反铁磁性
拓扑序
拓扑(电路)
磁性
霍尔效应
费米能级
电子
量子霍尔效应
电阻率和电导率
量子力学
量子
分子
组合数学
数学
作者
Xin Zhang,Zhicheng 志诚 Jiang 江,Jian 健 Yuan 袁,Xiaofei 骁飞 Hou 侯,Xia 霞 Wang 王,Na 娜 Yu 余,Zhiqiang 志强 Zou 邹,Zhengtai 正太 Liu 刘,Wei Xia,Zhenhai 振海 Yu 于,Dawei Shen,Yanfeng 艳峰 Guo 郭
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2023-05-17
卷期号:32 (9): 097201-097201
被引量:1
标识
DOI:10.1088/1674-1056/acd629
摘要
The van der Waals (vdW) MnSb 4 Te 7 is a newly synthesized antiferromagnetic (AFM) topological insulator hosting a robust axion insulator state irrelative to the specific spin structure. However, the intrinsic hole doped character of MnSb 4 Te 7 makes the Fermi level far away from the Dirac point of about 180 meV, which is unfavorable for the exploration of exotic topological properties such as the quantum anomalous Hall effect (QAHE). To shift up the Fermi level close to the Dirac point, the strategy of partially replacing Sb with Bi as Mn(Sb 1− x Bi x ) 4 Te 7 was tried and the magnetotransport properties, in particular, the anomalous Hall effect, were measured and analyzed. Through the electron doping, the anomalous Hall conductance σ AH changes from negative to positive between x = 0.3 and 0.5, indicative of a possible topological transition. Besides, a charge neutrality point (CNP) also appears between x = 0.6 and 0.7. The results would be instructive for further understanding the interplay between nontrivial topological states and the magnetism, as well as for the exploration of exotic topological properties.
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