材料科学
异质结
化学气相沉积
单层
范德瓦尔斯力
光致发光
纳米技术
图层(电子)
扫描隧道显微镜
箔法
表征(材料科学)
氮化硼
光电子学
化学工程
复合材料
分子
化学
工程类
有机化学
作者
Zhepeng Zhang,Xujing Ji,Jianping Shi,Xinyu Zhou,Shuai Zhang,Yanbing Hou,Yue Qi,Qiyi Fang,Qingqing Ji,Yu Zhang,Min Hong,Pengfei Yang,Xinfeng Liu,Qing Zhang,Lei Liao,Chuanhong Jin,Zhongfan Liu,Yanfeng Zhang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2017-03-27
卷期号:11 (4): 4328-4336
被引量:89
标识
DOI:10.1021/acsnano.7b01537
摘要
Stacked transition-metal dichalcogenides on hexagonal boron nitride (h-BN) are platforms for high-performance electronic devices. However, such vertical stacks are usually constructed by the layer-by-layer polymer-assisted transfer of mechanically exfoliated layers. This inevitably causes interfacial contamination and device performance degradation. Herein, we develop a two-step, low-pressure chemical vapor deposition synthetic strategy incorporating the direct growth of monolayer h-BN on Au foil with the subsequent growth of MoS2. In such vertical stacks, the interactions between MoS2 and Au are diminished by the intervening h-BN layer, as evidenced by the appearance of photoluminescence in MoS2. The weakened interfacial interactions facilitate the transfer of the MoS2/h-BN stacks from Au to arbitrary substrates by an electrochemical bubbling method. Scanning tunneling microscope/spectroscopy characterization shows that the central h-BN layer partially blocks the metal-induced gap states in MoS2/h-BN/Au foils. The work offers insight into the synthesis, transfer, and device performance optimization of such vertically stacked heterostructures.
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