Research Progress of the Linear Plasma Source Used in the Films Deposition over Large Areas

本文系统介绍了几种线形等离子体源的特点及其应用，根据激励源的不同分别称为直流、射频、甚高频、微波、双频线形等离子体源，有磁场辅助的称为磁场增强线形等离子体源。与传统的大面积等离子体源不同，线形等离子体源仅需在一维方向实现均匀、稳定的等离子体，采用多个线形结构并排，或者与被镀样品在水平/垂直方向以适当速度运动，即可获得大面积均匀的薄膜沉积。近年来，研究人员采用磁场约束技术，减少带电粒子在器壁的复合损失，进一步提高等离子体的密度、均匀度和稳定性。线形等离子体及磁场增强线形等离子体密度 > 1011 cm−3，不均匀度 1 m)，被广泛用于Si3N4、SiO2、光伏电池硅本征层、纳米金刚石等薄膜的大面积沉积，具有很重要的应用价值和科学意义。 The characteristics and application of several kinds of linear plasma sources are introduced. According to the power sources for plasma systems, there are DC, RF, VHF, microwave and dual frequency linear plasma sources, which with a magnet system are called magnetic field enhanced linear plasma sources. Compared with the conventional large scale plasma sources, linear plasma sources take the advantage that they just need to obtain uniform and stable plasma in one dimension. Through the linear plasma array or moving the substrate in horizontal and vertical direction, large scale uniform thin film can be deposited. Recent years, researchers tried to use the magnetic field to confine plasma so as to reduce the recombination loss in plasma and improve the density, uniformity and stability of plasma. The linear plasma sources with the density above1011 cm−3, dis-uniformity below ±5% (L >1 m), have been applied to fabricate large scale Si3N4, SiO2, intrinsic Si and nano-diamond thin film.