铟
材料科学
响应度
分析化学(期刊)
蓝宝石
带隙
阴极发光
X射线光电子能谱
微波食品加热
光电子学
光电探测器
光学
化学
发光
激光器
物理
量子力学
核磁共振
色谱法
作者
Usman Ul Muazzam,M. Raghavan,Anamika Singh Pratiyush,R. Muralidharan,Srinivasan Raghavan,Digbijoy N. Nath,S. A. Shivashankar
标识
DOI:10.1016/j.jallcom.2020.154337
摘要
We report on the demonstration of (InxGa1-x)2O3 (InGaO)-based UV photodetectors realized using a low temperature (∼200 °C) microwave irradiation-assisted deposition technique. By irradiating a solution of the substituted acetylacetonate (acac) complex, namely In0.6Ga0.4(acac)3, employed as the “single-source precursor”, InGaO film was deposited on sapphire substrate, and found to be poly(nano)crystalline, with root mean square (r.m.s). roughness of 8.9 nm. However, the indium content of the film (0.26 mol fraction) was considerably less than in the metal complex (0.6 mol fraction). The optical band gap of the film was found to be 4.5 eV from Tauc’s plot, indicative of a low indium mole fraction. This was confirmed using X-ray photoelectron spectroscopy measurements, from which the indium mole fraction was found to be 0.26. Further, the nature of band gap was determined and defect analysis was carried out using, respectively, Tauc’s plot and cathodoluminescence (CL) measurements. A planar, interdigitated metal-semiconductor-metal (MSM) photodetector fabricated with the InGaO film exhibited a high responsivity of 16.9 A/W at a bias of 20 V, corresponding to a band edge at ∼ 276 nm, with a high photo-to-dark current ratio of ∼105.
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