材料科学
氮化镓
光电子学
宽禁带半导体
碳化硅
砷化镓
拉曼光谱
激光器
半导体
功率半导体器件
镓
带隙
纳米技术
功率(物理)
光学
复合材料
物理
冶金
量子力学
图层(电子)
作者
Jae‐Hyuck Yoo,Subrina Rafique,Andrew Lange,Hongping Zhao,Selim Elhadj
出处
期刊:APL Materials
[American Institute of Physics]
日期:2018-03-01
卷期号:6 (3)
被引量:29
摘要
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.
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