材料科学
微观结构
复合材料
电磁屏蔽
合金
体积分数
电阻率和电导率
电磁干扰
电磁干扰
电子工程
电气工程
工程类
作者
Xiaomeng Fan,Xiaowei Yin,Lingqi Chen,Litong Zhang,Laifei Cheng
摘要
In this paper, a low‐temperature densification process of Al–Si alloy infiltration was developed to fabricate C/SiC–Ti 3 Si(Al)C 2 , and then the microstructure, mechanical, and electromagnetic interference ( EMI ) shielding properties were studied compared with those of C/SiC–Ti 3 SiC 2 and C/SiC–Si. The interbundle matrix of C/SiC–Ti 3 Si(Al)C 2 is mainly composed of Ti 3 Si(Al)C 2 , which can bring various microdeformation mechanisms, high damage tolerance, and electrical conductivity, leading to the high effective volume fraction of loading fibers and electrical conductivity of C/SiC–Ti 3 Si(Al)C 2 . Therefore, C/SiC–Ti 3 Si(Al)C 2 shows excellent bending strength of 556 MPa, fracture toughness 21.6 MPa·m 1/2 , and EMI shielding effectiveness of 43.9 dB over the frequency of 8.2–12.4 GHz. Compared with C/SiC–Si and C/SiC–Ti 3 SiC 2 , both the improvement of mechanical properties and EMI shielding effectiveness can be obtained by the introduction of Ti 3 Si(Al)C 2 into C/SiC, revealing great potential as structural and functional materials.
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