Impact of electrical injection on PCSELs by utilizing different electrode designs
电极
计算机科学
电气工程
材料科学
工程类
物理
量子力学
作者
Chhabindra Gautam,Mingsen Pan,Subhashree Seth,Thomas J. Rotter,Ming Zhou,Ricky Gibson,Bradley J. Thompson,Shanhui Fan,Ganesh Balakrishnan,Weidong Zhou
标识
DOI:10.1117/12.3002447
摘要
We report a selective injection design for GaAs-based Photonic-Crystal Surface-Emitting Lasers (PCSELs). COMSOL and FDTD simulations are carried out to design the injection electrode size to achieve largest gain overlapping factors with optical mode and lowest gain threshold. The PCSEL devices are fabricated with GaAs-based Multiple Quantum Well (MQW) wafer. Devices with surface area of 250×250 μm2 are fabricated with different injection electrode sizes. Testing results show that the best beam properties and an output power of 750 mW were achieved with a 150 μm p-electrode design, demonstrating selective injection impact to PCSEL beam profile.