电极
计算机科学
电气工程
材料科学
工程类
物理
量子力学
作者
Chhabindra Gautam,Mingsen Pan,Subhashree Seth,Thomas J. Rotter,Ming Zhou,Ricky Gibson,Bradley J. Thompson,Shanhui Fan,Ganesh Balakrishnan,Weidong Zhou
摘要
We report a selective injection design for GaAs-based Photonic-Crystal Surface-Emitting Lasers (PCSELs). COMSOL and FDTD simulations are carried out to design the injection electrode size to achieve largest gain overlapping factors with optical mode and lowest gain threshold. The PCSEL devices are fabricated with GaAs-based Multiple Quantum Well (MQW) wafer. Devices with surface area of 250×250 μm2 are fabricated with different injection electrode sizes. Testing results show that the best beam properties and an output power of 750 mW were achieved with a 150 μm p-electrode design, demonstrating selective injection impact to PCSEL beam profile.
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