原子层沉积
钝化
材料科学
氧气
杂质
分析化学(期刊)
泄漏(经济)
薄膜
图层(电子)
纳米技术
化学工程
化学
有机化学
工程类
经济
宏观经济学
作者
Su Yeon Kim,Seunghun Lee,In Ho Jo,Tae Joo Park,Jeong Hwan Kim
标识
DOI:10.1016/j.apsusc.2023.158790
摘要
HfO2 films grown via atomic layer deposition (ALD) at low temperature generally exhibit high impurity content, reduced density, and increased oxygen defects, resulting in degraded electrical properties. To overcome this issue, this study applied an in-situ defect passivation technique at low temperature, modifying the ALD oxygen source feeding step to suit - substrates. The electrical properties of the ALD HfO2 film grown at 80 °C are improved when the oxygen source feeding step is repeated twice, and especially the leakage current density is significantly decreased, which is approximately 1/7 smaller at an electric field of 1 MV/cm compared to the film grown via the conventional ALD process at 80 °C. This improvement in the electrical properties can be attributed to decreased carbon impurities and oxygen defects and increased film density. A simple modification of the oxygen source feeding step during the ALD process can effectively reduce defects within the ALD HfO2 films at the atomic layer level, even when grown at low deposition temperatures.
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