记忆电阻器
材料科学
凝聚态物理
电阻式触摸屏
突触
半导体
居里温度
磁性半导体
磁场
居里
领域(数学)
光电子学
铁磁性
电气工程
量子力学
物理
神经科学
生物
工程类
数学
纯数学
作者
Deren Li,Wenjie He,Juan Shi,Ya Nie,Yong Peng,Xi Zhang,Gang Xiang
标识
DOI:10.1002/adfm.202513638
摘要
Abstract Magnetic field ( H ) tuning of memristive characteristics is desirable since the H is a non‐invasive and non‐destructive means that can be remotely applied for wide applications. However, current studies mainly focus on the memristors based on magnetic materials in the ferromagnetic region or nonmagnetic materials, where the H only exerts a small influence on the strength of magnetization ( M ), resulting in slight tuning of the key memristive parameters such as the R OFF /R ON ratio. Here, a novel strategy of H tuning is experimentally demonstrated in a memristor based on magnetic semiconductor Mn‐doped GeSe (GeMnSe, T C = 280 K) in the paramagnetic region, where the Curie–Weiss law governs and the M increases prominently with H . Notably, upon applying an H of 1000 Oe, a high R OFF /R ON ratio of 10 6 and a low power consumption of ≈1.7 × 10 −8 W, which are 10 3 higher and10 3 lower than those without applying H , respectively, can be achieved in the Ag/GeMnSe/Pt structured memristor. Moreover, the artificial synapse behaviors of the memristor are enhanced by the H . Detailed analysis shows that the H ‐tuning mechanism is rooted in magnetic coupling effects originating from the H ‐induced prominent M and internal magnetic field ( B ) in the GeMnSe layer due to the Curie–Weiss law.
科研通智能强力驱动
Strongly Powered by AbleSci AI