Towards achieving an ideal convergence of light and heavy electron conduction bands in SnTe: Insights into copper doping

热电材料 热电效应 兴奋剂 材料科学 凝聚态物理 带隙 塞贝克系数 光电子学 工程物理 电子结构 纳米技术 热导率 冶金 物理 热力学 复合材料
作者
U. Sandhya Shenoy,D. Krishna Bhat
标识
DOI:10.1016/j.jacomc.2024.03.001
摘要

In recent years, tin telluride has garnered significant attention in the field of thermoelectrics, offering a promising avenue for sustainable ecofriendly conversion of waste heat into electricity. The unique electronic structure of this material makes it a compelling candidate for exploring innovative strategies to enhance its transport properties by employing substitutional doping. Among myriad elements doped, copper has been considered an intriguing candidate due to its ability to lower the thermal conductivity. However, its impact on the electronic structure has not been thoroughly explored till date. Herein, we investigate a nuanced aspect of copper doping, specifically focusing on its impact on tuning the electronic structure of SnTe. Significantly, our findings reveal a novel dimension to copper doping, showcasing its potential to enhance n-type performance in SnTe through the near-perfect convergence of its conduction bands - a feature not observed when doped in GeTe. We also shed the light on improvement of the p-type performance by means of valence band convergence and increased band gap. Furthermore, we reveal that copper doping allows the contribution of low-lying bands in SnTe to participate in transport, ensuring a higher Seebeck coefficient across the entire temperature range. Overall, this work provides a panoramic view of role of copper in improving the Seebeck co-efficient of SnTe making it a potential lead-free material for several thermoelectric applications.
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