材料科学
光电子学
制作
薄膜晶体管
晶体管
硅
电极
绝缘体上的硅
电场
纳米技术
电气工程
电压
图层(电子)
医学
化学
替代医学
工程类
物理化学
病理
物理
量子力学
作者
Yurong Liu,Zhixin Wang,Jiale Yu,Huailiang Xu
出处
期刊:Chinese Physics
[Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences]
日期:2009-01-01
卷期号:58 (12): 8566-8566
被引量:10
摘要
Polymer-based thin film transistors (PTFTs) were successfully fabricated on silicon substrates which was used as gate electrode, thermal silicon dioxide was used as gate insulators and poly(3-hexylthiophene) as semiconducting active layers for the transistors. The fabrication and measurement of the devices were all performed in the clean air. The PTFTs with a surface-modified gate insulator show better electric characteristics with the field-effect mobility of 0.02 cm 2 /(Vs) and the on/off ratio higher than 10 5 .
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