欧姆接触
肖特基势垒
肖特基二极管
材料科学
光电子学
太阳能电池
兴奋剂
阴极
微电子
扩散
凝聚态物理
开路电压
肖特基效应
电流密度
异质结
偏压
电压
化学
纳米技术
物理
热力学
物理化学
二极管
量子力学
图层(电子)
作者
Bushra Mohamed Omer,Amar Merazga
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2021-02-01
卷期号:11 (2)
被引量:2
摘要
The classical Schottky diffusion theory is applied to a non-ohmic cathode contact P3HT:PCBM bulk-heterojunction solar cell under the assumption of a p-type doped active region. Analytical expressions of the dark current density/voltage (JD/V) characteristic and the open-circuit voltage under illumination VOC are, thus, derived for this cell. They are validated with reference to a complete numerical simulation by the analysis of microelectronic and photonic structures-one-dimensional simulator. The Schottky diffusion theory is shown to be reasonably applicable to modeling the JD/V characteristic in the forward bias region within the range below the built-in voltage Vbi and in the complete reverse bias region. It is demonstrated that depending on the p-doping density NA and the hole mobility μh of the active region, VOC is linearly controlled by the Schottky barrier height φB.
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