材料科学
蓝宝石
离子注入
纳米团簇
纳米金刚石
碳纤维
透射电子显微镜
钻石
分析化学(期刊)
离子
硅
微观结构
纳米技术
复合材料
光电子学
光学
化学
有机化学
激光器
物理
复合数
色谱法
作者
J. O. Orwa,J. L. Peng,Jeffrey C. McCallum,David N. Jamieson,Sergey Rubanov,Steven Prawer
摘要
Carbon ions of MeV energy were implanted into sapphire to fluences of 1×1017 or 2×1017cm−2 and thermally annealed in forming gas (4% H in Ar) for 1h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L1) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L2) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L3) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.
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