电致发光
发光二极管
材料科学
光电子学
化学气相沉积
图层(电子)
二极管
金属有机气相外延
氮化物
拉伤
量子阱
光学
复合材料
外延
激光器
物理
内科学
医学
作者
Bo Hyun Kong,Hyung Koun Cho,Mi Yang Kim,R. J. Choi,Bae Kyun Kim
标识
DOI:10.1016/j.jcrysgro.2010.03.037
摘要
InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) with different spacer layer structures were grown by metalorganic chemical vapor deposition. Fast-Fourier-transformed high-resolution transmission electron microscopy was used to determine the influence of the strain status in the spacer layer on Mg distribution and device performance. A comparison of the (1 1¯ 0 0) planar distance showed that the high-temperature grown InGaN layer in the spacer had a high level of stored strain. This led to the formation of a continuous facet contrast induced by Mg segregation in the p-layer, which was responsible for the deterioration of the electroluminescence performance of the LEDs. These results show that the delicate control of stored strain in nitride films is important for improving the device performance.
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