材料科学
克罗米亚
联轴节(管道)
异质结
离子
离子交换
纳米技术
作者
Shan Lin,Zhiwen Wang,Qinghua Zhang,Shengru Chen,Qiao Jin,Hongbao Yao,Shuai Xu,Fanqi Meng,Xinmao Yin,Can Wang,Chen Ge,Haizhong Guo,Chi Sin Tang,Andrew T. S. Wee,Lin Gu,Kuijuan Jin,Hongxin Yang,Er-Jia Guo
标识
DOI:10.1002/adfm.202109828
摘要
Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-doping is proposed to be another effect means to change magnetic ground states. Here we demonstrate the synthesis of high-quality single-phase chromium oxynitride thin films using in-situ nitrogen doping. Unlike antiferromagnetic monoanionic chromium oxide and nitride phases, chromium oxynitride exhibits a robust ferromagnetic and insulating state, as demonstrated by the combination of multiple magnetization probes and theoretical calculations. With increasing the nitrogen content, the crystal structure of chromium oxynitride transits from trigonal (R3c) to tetragonal (4mm) phase and its saturation magnetization reduces significantly. Furthermore, we achieve a large and controllable exchange bias field in the chromia heterostructures by synthetic anion engineering. This work reflects the anion engineering in functional oxides towards the potential applications in giant magnetoresistance and tunnelling junctions of modern magnetic sensors and read heads.
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