天文干涉仪
绝缘体上的硅
硅
材料科学
干涉测量
光学
马赫-曾德尔干涉仪
灵敏度(控制系统)
平版印刷术
电子束光刻
自由光谱范围
光电子学
物理
抵抗
纳米技术
电子工程
谐振器
工程类
图层(电子)
作者
Zuoqin Ding,Daoxin Dai,Yaocheng Shi
出处
期刊:Optics Letters
[Optica Publishing Group]
日期:2021-05-14
卷期号:46 (11): 2787-2787
被引量:16
摘要
An ultra-sensitive temperature sensor without sacrificing detection range is demonstrated on the silicon-on-insulator (SOI) platform using cascaded Mach–Zehnder interferometers (MZIs). The sensitivity enhancement is achieved by tailoring the geometric parameters of the two MZIs to have similar free spectral ranges (FSRs) but quite different sensitivities. The proposed sensor only needs single lithography for the sensing unit, without introducing negative thermo-optic coefficient (TOC) materials. The measured sensitivity is 1753.7 pm/°C from 27°C to 67°C, which is higher than any reported results on a silicon platform and about 21.9 times larger than conventional all-silicon temperature sensors.
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