Modeling the Impact of Bulk Resistivity on Bifacial n-PERT Rear-Junction Solar Cells

This work mainly focuses on modeling the impact of bulk resistivity pb on the bifacial n-type passivated emitter rear and totally diffused rear-junction (n-PERT-RJ) solar cells using Quokka3. Through simulation, under the front illumination, the light-generated excess carrier flow behavior in the bulk is studied. The regulatory function of the rear-junction solar cells' bulk on the electron flows distributary is discussed. Finally, how the different p _b values affect the hole-current flow behavior and the FSF performance is revealed. This explains very well the reasons for decreasing short-circuit current J _SC because of the low p _b wafers in n-PERT-RJ solar cells. The studies also provide insights on the lowest value of pb that can be applied to n-PERT-RJ solar cells without the efficiency deterioration. We also simulated the n-PERT-RJ solar cell performance and bifaciality when applying different pb values under rear illumination. Last but not the least, investigation on how pb affects the output performance will be extended to when n-PERT-RJ solar cells are served as the bottom subcell in a four-terminal tandem configuration.