Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess

Low damage atomic layer etching (ALE) gate recess is developed for fabrication of millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced bombardments to the AlGaN barrier is effectively suppressed by the ALE recess, contributing to a well-controlled recessed surface morphology. The suppressed lattice damage to AlGaN/GaN heterostructure is also reflected by a significantly reduced gate leakage as well as an invisible threshold voltage shift associated with damage induced traps. With a 0.15-μm T-gate fabrication technology, a high power-gain cutoff frequency f _MAX of 205 GHz has been achieved. The ALE-recessed AlGaN/GaN HEMTs exhibits a record high power-addedefficiency (PAE) of 43.6% at 40 GHz in a continuous-wave mode. The associated gain and output power density are also remarkably improved compared with controlled HEMTs with conventional gate recess process.