小丘
材料科学
光电子学
宽禁带半导体
调制(音乐)
薄脆饼
发光二极管
复合材料
哲学
美学
作者
Xuzhou Fang,Jiaming Wang,Fujun Xu,Lisheng Zhang,Jing Lang,Ziyao Zhang,Fuyun Tan,Xuelin Yang,X. N. Kang,Zhixin Qin,Ning Tang,Xinqiang Wang,Weikun Ge,Bo Shen
摘要
The formation of spiral hillocks during AlGaN growth is investigated by modulating the residual strain in the underlying AlN templates. It is demonstrated that the high-density hillocks are directly related to the compressive stress, in particular for AlGaN on high-temperature annealed (HTA) AlN. AlN/AlGaN stress modulation multilayer is then introduced and optimized before AlGaN growth, which is revealed to be helpful to release the compressive stress in AlGaN as well as to suppress the hillocks. Eventually, the hillocks in AlGaN/HTA-AlN are eliminated, leading to a great improvement of yield for deep-ultraviolet light-emitting diode (DUV-LED) wafers. This work will definitely promote further industrial development and application of DUV-LEDs.
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