Industrial‐Scale Silicon Heterojunction Photovoltaic Module Towards 25% Efficiency Enabled by High‐Quantum‐Yield CaSrSiO4:Ce3+ Inorganic Downshifting Materials

ABSTRACT The market uptake of silicon heterojunction (SHJ) solar modules is projected to increase rapidly, which is expected to play a significant role in future sustainability. However, a major barrier to the mass production of SHJ solar modules is significant power degradation under ultraviolet (UV) irradiation. Here, we reported a 98.13% high‐quantum yield and highly reliable CaSrSiO 4 :Ce 3+ UV‐to‐blue–violet downshifting (UV‐DS) inorganic phosphor for photovoltaic applications, which could minimize UV‐induced degradation, the levelized cost of energy, and the generation of photovoltaic module waste. The CaSrSiO 4 :Ce 3+ inorganic phosphor was synthesized via a solid‐state reaction method, where Ce 3+ ions preferentially occupy the 7‐coordinated Ca site. As a proof of concept, an outstanding output power of 776.2 W and a module efficiency of 24.99% were achieved on 3.1 m 2 industrial‐scale module. Only 2.49% power degradation was observed after 180 kWh/m 2 UV irradiation. A statistical lifetime assessment based on UV irradiance data of Chinese geographical locations proven that UV‐DS encapsulants significantly enhanced the long‐term stability of modules, with better power generation performance and economic and environmental characteristics. Our study offered a blueprint for designing SHJ photovoltaic modules sustainably and strategically for targeting geographic markets, mitigating one of the environmental risks associated with SHJ modules and accelerating practical application.