卤化物
碱金属
化学气相沉积
材料科学
单层
Crystal(编程语言)
纳米技术
催化作用
化学工程
晶体生长
金属
盐(化学)
吸附
过渡金属
沉积(地质)
无机化学
化学
冶金
结晶学
有机化学
计算机科学
古生物学
程序设计语言
工程类
生物
沉积物
作者
Jinchao Wu,Yandong Zhang,Zhiyuan Jia,Zhongge Ma,Jinhui Song
标识
DOI:10.1002/slct.202301599
摘要
Abstract Monolayer MoS 2 is a two‐dimensional transition‐metal dichalcogenide (TMD), and its atomic‐level thickness makes it an appealing research target in beyond‐silicon devices. Future practical uses are intimately related to controllable synthesis of materials at present, and salt‐assisted chemical vapor deposition (SA‐CVD) offers a promising way. However, the specific growth mechanism of alkali metal salts on MoS 2 crystal development and their influence on optoelectronic characteristics of the as‐grown MoS 2 crystals is not fully identified. Here, based on large amount experiments, we present a vapor‐liquid‐solid (VLS) edge‐adsorbed growth model for synthesizing MoS 2 nanoflakes, emphasizing the edge‐adsorbed phenomena of the alkali metal element Na in regulating MoS 2 crystal shape. Through controlling flow rate of carrier gas, the MoS 2 defective morphology can be effectively suppressed. This study contributes to a better understanding of the role of alkali metal halide salts in TMD development by providing experimental and theoretical evidence, which is critical for synthesizing high quality TMD by alkali metal halide salts catalyst.
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