Understanding Photophysical Properties of Molecules Relevant in Organic Semiconductor Laser Diodes from Electron Localization Function-Tuned and Solvent-Tuned Range-Separated Functionals

激发态 化学 密度泛函理论 基态 离域电子 航程(航空) 电子 二极管 光电子学 分子物理学 原子物理学 计算化学 材料科学 物理 量子力学 复合材料 有机化学
作者
Satter Rohman,Rahul Kar
出处
期刊:Journal of Physical Chemistry A [American Chemical Society]
卷期号:127 (43): 9069-9081 被引量:1
标识
DOI:10.1021/acs.jpca.3c05486
摘要

Organic semiconductor laser diodes (OSLDs) are prevalent in optoelectronics because of their sustainable energy applications. Organic molecules used in such diodes are usually large; hence, their studies are computationally challenging with high-end benchmark methods. Computational methods with reliable accuracy and efficiency are always indispensable. In the present work, we have applied our computationally inexpensive, nonempirically tuned [electron localization function (ELF*) and solvent (Sol*)] range-separated (RS) functionals to study five molecules used in OSLDs. The emission energies in three different environments [toluene, CBP (4,4'-bis(n-carbazolyl)-1,1'-biphenyl) film, and gas] have been computed with the tuned functionals and compared with the experimental emission energies. ELF* and Sol* functionals can accurately reproduce emission energies in toluene and CBP film environments. On the other hand, both ELF* and IP-tuned functionals with excited-state geometry (IP*) perform better in the gas phase. In addition, a comparative study is performed between time-dependent density functional theory and the Tamm-Dancoff approximation. Along with the emission energy, oscillator strength values have also been reported. Different IP-tuned RS parameters were obtained with the ground- and excited-state geometries. Interestingly, it has been observed that the optimally tuned RS parameter with excited-state geometry (IP*) performs better compared to that with ground-state geometries (IP). Fractional occupation calculations show that the tuned functionals exhibit less localization and delocalization error. The study envisages that ELF* and Sol* functionals can be used to design future candidates for OSLDs.
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