Optimizing RRAM Performance: A Comparative Analysis of Forming Strategies

This paper investigates the impact of various forming strategies on resistive random access memory (RRAM) device performance, focusing on conductance distribution and failure rates. Through experimental characterization and the introduction of a new figure of merit for failure rate, we analyze Progressive I-Mode with and without Current Limiter (I-PCL/IP), Single-Pulse I-Mode (I-SPCL), and Voltage-Mode forming methods. Our findings reveal that I-PCL significantly enhances device reliability and performance by optimizing conductance distribution and minimizing failure rates post-cycling, offering critical insights for the development and application of RRAM technologies.