倍半氧化物
钒
材料科学
薄膜
金属-绝缘体过渡
凝聚态物理
脉冲激光沉积
电子结构
电阻率和电导率
过渡金属
相变
化学气相沉积
金属
纳米技术
冶金
化学
物理
生物化学
催化作用
量子力学
作者
S. S. Majid,D. K. Shukla,F. Rahman,K. Gautam,R. J. Choudhary,Vasant Sathe,D. M. Phase
摘要
The tailoring and understanding of the metal-insulator transitions (MITs) in vanadium sesquioxide, V2O3, is of major interest for both applications and fundamental physics. V2O3 has been characterized by MIT and concurrent structural transition at ∼155 K; however, the nature of the MIT has remained more elusive. We investigated the MIT and the electronic structure (in metallic phase) of the pulsed laser deposition grown strained vanadium sesquioxide thin films on Si. The strained thin films synthesized here show the suppression (by ∼23 K) of the MIT to lower temperatures, whilst the structural transition temperature decreases only by ∼10 K. Our results systematically confirm that albeit the structural changes are crucial in V2O3, electronic transition seems to be of Mott-Hubbard type. Stabilization of the metallic phase in the strained V2O3 thin film has been manifested from resistivity data and observations of the increased crystal field and quasiparticle features.
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